L3Harris Technologies had three patents in connectivity during Q2 2024. The patent filed by L3Harris Technologies Inc in Q2 2024 is for a photocathode with an absorber containing a p-type bulk active layer and a plurality of nanostructures. These nanostructures are formed at a band bending region between the bulk active layer and the vacuum. GlobalData’s report on L3Harris Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
L3Harris Technologies had no grants in connectivity as a theme in Q2 2024.
Recent Patents
Application: Photocathode including nanostructures for extended wavelengths (Patent ID: US20240170246A1)
The patent filed by L3Harris Technologies Inc. describes a photocathode structure with an absorber that includes a p-type bulk active layer and a plurality of nanostructures formed on this layer at a band bending region. The nanostructures can consist of 2 to 5 layers and may be quantum wells or quantum dots. Additionally, the structure may include layers such as InGaAsNSb and GaAsN or InGaAs and GaAsP, with an InGaP etch stop layer to prevent surface damage.
The method of forming the photocathode involves creating the p-type bulk active layer on a substrate material and then forming the nanostructures at the band bending region. The process can include forming 2 to 5 nanostructure layers, which may be quantum wells or quantum dots. After formation, the substrate material can be removed, and a Cs-based activation layer can be applied on the nanostructures. The p-type bulk active layer is doped exponentially by p-type impurities, with higher levels of doping away from the interface with the substrate material. The resulting photocathode structure exposes the nanostructures to a vacuum, enhancing their performance at the band bending region.
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