L3Harris Technologies had three patents in advanced materials during Q2 2024. The patent filed by L3Harris Technologies Inc in Q2 2024 is for a photocathode with an absorber that includes a p-type bulk active layer and a plurality of nanostructures formed on it. These nanostructures are located at a band bending region between the bulk active layer and the vacuum. GlobalData’s report on L3Harris Technologies gives a 360-degree view of the company including its patenting strategy. Buy the report here.
L3Harris Technologies had no grants in advanced materials as a theme in Q2 2024.
Recent Patents
Application: Photocathode including nanostructures for extended wavelengths (Patent ID: US20240170246A1)
The patent filed by L3Harris Technologies Inc. describes a photocathode structure with an absorber that includes a p-type bulk active layer and a plurality of nanostructures formed on this layer at a band bending region. The nanostructures can consist of 2 to 5 layers and may be quantum wells or quantum dots. Additionally, the structure may include specific material layers such as InGaAsNSb and GaAsN or InGaAs and GaAsP, with an InGaP etch stop layer to prevent surface damage.
The method of forming the photocathode involves creating the p-type bulk active layer on a substrate material and then forming the nanostructures at the band bending region. The process can include the formation of 2 to 5 nanostructure layers, quantum wells or quantum dots, and specific material layers like InGaAsNSb and GaAsN or InGaAs and GaAsP. The method may also include removing the substrate material and applying a Cs-based activation layer on the nanostructures or exposing them to a vacuum. The p-type bulk active layer is doped exponentially by p-type impurities to optimize performance. Overall, the patent focuses on a novel photocathode design with enhanced efficiency and performance characteristics.
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